參數(shù)資料
型號(hào)： AP9585M
廠商： ADVANCED POWER ELECTRONICS CORP
英文描述： P-CHANNEL ENHANCEMENT MODE
中文描述： P溝道增強(qiáng)型
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 81K
代理商： AP9585M
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
-80V
180m
Ω
-2.7A
▼
Lower Gate Charge
▼
Fast Switching Characteristic
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
P
D
@T
A
=25
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
50
Unit
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
Thermal Data
Parameter
2.5
0.02
-55 to 150
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current
3
Pulsed Drain Current
1
-2.1
-20
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
200302041
AP9585M
Rating
-80
±25
-2.7
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
SS
G
D
D
D
D
SO-8
G
D
S
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