- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375330 > AO4404AL (ALPHA) N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | AO4404AL |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 139K |
| 代理商： | AO4404AL |
AO4404A
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
0.002
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
1.5
nA
V
A
0.7
40
1
18
25
22
32
26
0.71
24
30
30
48
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
10
S
V
A
1
4.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
900
88
65
0.95
1100
pF
pF
pF
1.
5
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
10
1.8
3.75
3.2
3.5
21.5
2.7
16.8
8
12
nC
nC
nC
ns
ns
ns
ns
20
12
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=5A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=2.5V, I
D
=5A
V
DS
=5V, I
D
=5A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
Reverse Transfer Capacitance
Gate resistance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
μ
A
V
DS
=0V, V
GS
= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
F
=5A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=4.5V, V
DS
=15V, I
D
=8.5A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=1.8
,
R
GEN
=6
Input Capacitance
Output Capacitance
V
GS
=0V, V
DS
=0V, f=1MHz
m
V
GS
=4.5V, I
D
=8.5A
I
S
=1A,V
GS
=0V
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
provides a single pulse rating.
Rev 0 : Jan 2006
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4404B | N-Channel Enhancement Mode Field Effect Transistor |
| AO4404 | Circular Connector; No. of Contacts:26; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:17-26 RoHS Compliant: No |
| AO4407A | P-Channel Enhancement Mode Field Effect Transistor |
| AO4407 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4407L | P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4404B | 功能描述:MOSFET N-CH 30V 8.5A 8-SOIC RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| AO4404B_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO4404BL | 功能描述:MOSFET N-CH 30V 8.5A 8-SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:散裝 零件狀態(tài):過期 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:邏輯電平柵極，2.5V 驅(qū)動 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:8.5A（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:24 毫歐 @ 8.5A，10V 不同 Id 時的 Vgs（th）（最大值）:1.5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:12nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:1100pF @ 15V 功率 - 最大值:3.1W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商器件封裝:8-SO 標準包裝:1 |
| AO4404BL_101 | 功能描述:MOSFET N-CH 8-SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:8.5A（Ta） 驅(qū)動電壓（最大 Rds On，最小 Rds On）:2.5V，10V 不同 Id 時的 Vgs（th）（最大值）:1.45V @ 250μA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:7nC @ 4.5V Vgs（最大值）:±12V 不同 Vds 時的輸入電容（Ciss）（最大值）:630pF @ 15V FET 功能:- 功率耗散（最大值）:3.1W（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:24 毫歐 @ 8.5A，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 供應商器件封裝:8-SO 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 標準包裝:3,000 |
| AO4405 | 制造商:AOS 功能描述:MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。