參數(shù)資料
型號(hào): AN10E40
廠商: Electronic Theatre Controls, Inc.
英文描述: Field Programmable Analog Array
中文描述: 現(xiàn)場(chǎng)可編程模擬陣列
文件頁數(shù): 33/36頁
文件大?。?/td> 293K
代理商: AN10E40
AN10E40 Data Manual
29
Discharge to the Device
An ESD event can occur when any charged conductor (including the human body) discharges to an ESDS
(electrostatic discharge sensitive) device. The most common cause of electrostatic damage is the direct transfer of
electrostatic charge from the human body or a charged material to the electrostatic discharge sensitive (ESDS)
device. When one walks across a floor, an electrostatic charge accumulates on the body. Simple contact of a finger
to the leads of an ESDS device or assembly allows the body to discharge, possibly causing device damage. The
model used to simulate this event is the Human Body Model (HBM).
A similar discharge can occur from a charged conductive object, such as a metallic tool or fixture. The model used
to characterize this event is known as the Machine Model.
Discharge from the Device
The transfer of charge from an ESDS device is also an ESD event. The trend towards automated assembly would
seem to solve the problems of HBM ESD events. However, it has been shown that components may be more
sensitive to damage when assembled by automated equipment. A device may become charged, for example, from
sliding down the feeder. If it then contacts the insertion head or another conductive surface, a rapid discharge
occurs from the device to the metal object. This event is known as the Charged Device Model (CDM) event, and
can be more destructive than the HBM for some devices. Although the duration of the discharge is very short--often
less than one nanosecond--the peak current can reach several tens of amperes.
Field Induced Discharges
Another event that can directly or indirectly damage devices is termed Field Induction. As noted earlier, whenever
any object becomes electrostatically charged, there is an electrostatic field associated with that charge. If an ESDS
device is placed in that electrostatic field, a charge may be induced on the device. If the device is then momentarily
grounded while within the electrostatic field, a transfer of charge from the device occurs.
AN10E40 ESD Classifications
Pin Type
Digital Inputs
Classifications
Class 2
Class M4
Class C6
Class 2
Class M4
Class C6
Class 2
Class M4
Class C6
Class 2
Class M4
Class C6
Class 2
Class M4
Class C6
Notes
M4 and C6 classifications are based
on estimated performance based on
extensive HBM characterization.
M4 and C6 classifications are based
on estimated performance based on
extensive HBM characterization.
M4 and C6 classifications are based
on estimated performance based on
extensive HBM characterization.
M4 and C6 classifications are based
on estimated performance based on
extensive HBM characterization.
M4 and C6 classifications are based
on estimated performance based on
extensive HBM characterization.
Digital Outputs
Digital I/0
Analog I/0
CEXT, OPAMVMR, VMR, VREF
相關(guān)PDF資料
PDF描述
AN17850A Silicon Monolithic Bipolar IC
AN19 AN19 - How 2 Use de KITS SPC DC Motor with StarTech PPI Card
AN2110S JT 66C 66#22D SKT RECP
AN220D04-DEVLP DANAMICALLY RECONFIGURABLE FPAA
AN220D04-EVAL DANAMICALLY RECONFIGURABLE FPAA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AN10-N01 制造商:SMC Corporation of America 功能描述:Silencer, Compact Resin, Male Thread, 1/8" NPT Port, 30 dB(A), Model AN10
AN110 制造商:SILABS 制造商全稱:SILABS 功能描述:16-BIT PWM USING AN ON-CHIP TIMER
AN110-01 制造商:SMC Corporation of America 功能描述:MUFFLER 1/8 PT 制造商:SMC 功能描述:TCT Bulk
AN11006 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Single stage 2.3_2.7GHz LNA with BFU730F
AN11007 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Single stage 5-6 GHz WLAN LNA with BFU730F