參數(shù)資料
型號: AM45DL3208GB70IT
廠商: ADVANCED MICRO DEVICES INC
元件分類: 存儲器
英文描述: Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封裝: 8 X 11.60 MM, FBGA-73
文件頁數(shù): 65/66頁
文件大?。?/td> 1196K
代理商: AM45DL3208GB70IT
March 12, 2004
Am45DL3208G
63
P R E L I M I N A R Y
REVISION SUMMARY
Revision A (June 4, 2002)
Initial release.
Revision A+1 (June 18, 2002)
Pseudo SRAM DC and Operating Characteristics
Added V
IH
and V
IL
specifications and added notes to
table.
Revision A+2 (July 9, 2002)
Command Definitions (Flash Word Mode)
Changed 80h to 82h for factory locked and 00h to
002h for not factory locked.
Revision B (February 28, 2003)
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text
and figure 3.
SecSi Sector Flash Memory Region, and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Noted that the ACC function and unlock bypass modes
are not available when the SecSi sector is enabled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Com-
mand Sequence
Noted that the SecSi Sector, autoselect, and CFI
functions are unavailable when a program or erase
operation is in progress.
Common Flash Memory Interface (CFI)
Changed CFI website address.
Revision B+1 (March 12, 2004)
Table 15. Command Definitions (Flash Word Mode)
In Note 9, changed device ID for top boot to 01h and
for bottom boot to 00h.
Trademarks
Copyright 2004 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies
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