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參數(shù)資料
| 型號： | AM29N323DT11AWKI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 32兆位（2米× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 27/48頁 |
| 文件大小： | 824K |
| 代理商： | AM29N323DT11AWKI |
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26
Am29N323D
August 8, 2002
DC CHARACTERISTICS
CMOS Compatible
Note:
1. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
2. Eight I/Os switching.
3. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
4. I
CC
active while Embedded Erase or Embedded Program is in progress.
5. Device enters automatic sleep mode when addresses are stable for t
ACC
+ 60 ns. Typical sleep mode current is equal to I
CC3
.
6. Total current during accelerated programming is the sum of V
PP
and V
CC
currents.
Parameter Description
Test Conditions (Note 1)
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
±1
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
max
±1
μA
I
CCB
V
CC
Active Burst Read Current
(Note 2)
CE# = V
IL
, OE# = V
IL
25
30
mA
I
CC1
V
CC
Active Asynchronous Read
Current (Note 3)
CE# = V
IL
, OE# = V
IH
5 MHz
10
16
mA
1 MHz
2
4
mA
I
CC2
V
CC
Active Write Current (Note 4)
CE# = V
IL
, OE# = V
IH
, V
PP
= V
IH
15
40
mA
I
CC3
V
CC
Standby Current (Note 5)
CE# = V
IH
, RESET# = V
IH
0.2
10
μA
I
CC4
V
CC
Reset Current
RESET# = V
IL,
CLK = V
IL
0.2
10
μA
I
CC5
V
CC
Active Current
(Read While Write)
CE# = V
IL
, OE# = V
IL
40
60
mA
I
PP
Accelerated Program Current
(Note 6)
CE# = V
IL
, OE# = V
IH,
V
PP
= 12.0 ± 0.5 V
V
PP
7
15
mA
V
CC
5
10
mA
V
IL
Input Low Voltage
–0.5
0.2
V
V
IH
Input High Voltage
V
CC
– 0.2
V
CC
+ 0.2
V
V
OL
Output Low Voltage
I
OL
= 100 μA, V
CC
= V
CC
min
0.1
V
V
OH
Output High Voltage
I
OH
= –100 μA, V
CC
= V
CC
min
V
CC
– 0.1
V
V
ID
Voltage for Accelerated Program
11.5
12.5
V
V
LKO
Low V
CC
Lock-out Voltage
1.0
1.4
V
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