參數(shù)資料
型號: AM29N323DT11AWKI
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 32兆位(2米× 16位)的CMOS 1.8伏,只有同時讀/寫,突發(fā)模式閃存
文件頁數(shù): 26/48頁
文件大?。?/td> 824K
代理商: AM29N323DT11AWKI
August 8, 2002
Am29N323D
25
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature
with Power Applied . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground,
All I/Os except V
PP
(Note 1). . . –0.5 V to V
CC
+ 0.5 V
V
CC
(Note 1). . . . . . . . . . . . . . . . . .–0.5 V to +2.5 V
V
PP
(Note 2) . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
Output Short Circuit Current (Note 3) . . . . . . 100 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During
voltage transitions, input at I/Os may undershoot V
SS
to
–2.0 V for periods of up to 20 ns during voltage transitions
inputs might overshooot to V
CC
+0.5 V for periods up to
20 ns. See
Figure 5
. Maximum DC voltage on output and
I/Os is V
CC
+ 0.5 V. During voltage transitions outputs
may overshoot to V
CC
+ 2.0 V for periods up to 20 ns. See
Figure 6
.
2. Minimum DC input voltage on V
PP
is –0.5 V. During
voltage transitions, V
PP
may overshoot V
SS
to –2.0 V for
periods of up to 20 ns. See
Figure 5
. Maximum DC input
voltage on V
PP
is +12.5 V which may overshoot to +13.5
V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
4. Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only; functional operation of the de-
vice at these or any other conditions above those indi-
cated in the operational sections of this data sheet is not
implied. Exposure of the device to absolute maximum rat-
ing conditions for extended periods may affect device reli-
ability.
Figure 5.
Overshoot Waveform
Maximum Negative
Figure 6.
Overshoot Waveform
Maximum Positive
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . . –25°C to +85°C
V
CC
Supply Voltages
V
CC
min. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.7 V
V
CC
max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.9 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
20 ns
20 ns
V
CC
+2.0 V
V
CC
+0.5 V
20 ns
1.0 V
相關(guān)PDF資料
PDF描述
Am29PDS322D High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-CDIP -55 to 125
Am29PDS322DT10 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
Am29PDS322DB10 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
Am29PDS322DB12 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
Am29PDS322DT12 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29PDL128G70RPEI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16/4M X 32 70NS 80FBGA - Trays
AM29PDL128G80PEF 制造商:Spansion 功能描述:SPZAM29PDL128G80PEF 128M FLASH EOL100409
AM29PL141BXA 制造商:AMD 功能描述:*
AM29PL141DC 制造商:Advanced Micro Devices 功能描述:USER PROGRAMMABLE SPECIAL FUNCTION ASIC, 28 Pin, DIP
AM29PL160CB-90SF 制造商:Advanced Micro Devices 功能描述: