參數(shù)資料
型號： AM29LV800DB-120WCC
廠商： Advanced Micro Devices, Inc.
英文描述： Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 180pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
中文描述： 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導扇區(qū)閃存
文件頁數(shù)： 49/51頁
文件大?。?/td> 1628K
代理商： AM29LV800DB-120WCC
47
Am29LV800D
Am29LV800D_00_A4_E January 21, 2005
P R E L I M I N A R Y
Physical Dimensions
VBK 048 - 48 Ball Fine-Pitch Ball Grid Array (FBGA) 6.15 x 8.15 mm
3338 \ 16-038.25b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
PACKAGE
JEDEC
VBK 048
N/A
SYMBOL
A
A1
A2
D
E
D1
E1
MD
ME
N
fb
e
SD / SE
6.15 mm x 8.15 mm NOM
PACKAGE
MIN
NOM
---
---
0.18
---
0.62
---
8.15 BSC.
6.15 BSC.
5.60 BSC.
4.00 BSC.
8
6
48
0.33
---
0.80 BSC.
0.40 BSC.
---
MAX
1.00
---
0.76
0.43
OVERALL THICKNESS
BALL HEIGHT
BODY THICKNESS
BODY SIZE
BODY SIZE
BALL FOOTPRINT
BALL FOOTPRINT
ROW MATRIX SIZE D DIRECTION
ROW MATRIX SIZE E DIRECTION
TOTAL BALL COUNT
BALL DIAMETER
BALL PITCH
SOLDER BALL PLACEMENT
DEPOPULATED SOLDER BALLS
NOTE
SIDE VIEW
TOP VIEW
SEATING PLANE
A2
A
(4X)
0.10
10
D
E
C
0.10
A1
C
B
A
C
0.08
BOTTOM VIEW
A1 CORNER
B
A
M
f 0.15
C
M
7
7
6
e
SE
SD
6
5
4
3
2
A
B
C
D
E
F
G
1
H
fb
E1
D1
C
f 0.08
PIN A1
CORNER
INDEX MARK
相關PDF資料
PDF描述
AM29LV800DT-90WCF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800DT-90WCI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800DT-120ED Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
AM29N323D 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29N323DT11AWKI 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
AM29LV800DB-70EF 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP
AM29LV800DB-90EC 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
AM29LV800DB-90ED 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
AM29LV800DB90EI 制造商:Advanced Micro Devices 功能描述:
AM29LV800DB-90EI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
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