參數(shù)資料
型號： AM29LV800DB-120WCC
廠商： Advanced Micro Devices, Inc.
英文描述： Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 180pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
中文描述： 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導扇區(qū)閃存
文件頁數(shù)： 33/51頁
文件大?。?/td> 1628K
代理商： AM29LV800DB-120WCC
January 21, 2005 Am29LV800D_00_A4_E
Am29LV800D
31
P R E L I M I N A R Y
AC Characteristics
Read Operations
Notes:
1. Not 100% tested.
2. See Figure 1 and Table 7 for test specifications.
Parameter
Description
Speed Options
JEDEC
Std
Test Setup
-70
-90
-120
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
70
90
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE# = V
IL
OE# = V
IL
Max
70
90
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
70
90
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
35
50
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
25
30
30
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
25
30
30
ns
t
OEH
Output Enable
Hold Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1)
Min
0
ns
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
OE
0 V
RY/BY#
RESET#
t
DF
t
OH
Figure 1. Read Operations Timings
相關PDF資料
PDF描述
AM29LV800DT-90WCF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800DT-90WCI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800DT-120ED Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
AM29N323D 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29N323DT11AWKI 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
AM29LV800DB-70EF 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP
AM29LV800DB-90EC 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
AM29LV800DB-90ED 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
AM29LV800DB90EI 制造商:Advanced Micro Devices 功能描述:
AM29LV800DB-90EI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
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