參數(shù)資料
型號: Am29F004B-B-70JE
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝× 8位)的CMOS 5.0伏,只引導扇區(qū)閃存
文件頁數(shù): 19/37頁
文件大?。?/td> 993K
代理商: AM29F004B-B-70JE
8/5/05
Am29F004B
17
A D V A N C E I N F O R M A T I O N
WRITE OPERATION STATUS
The device provides several bits to determine the status of a
write operation: DQ2, DQ3, DQ5, DQ6, and DQ7.
Table 6 on
page 19
and the following subsections describe the functions
of these bits. DQ7 and DQ6 each offer a method for deter-
mining whether a program or erase operation is complete or
in progress. These three bits are discussed first.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Algorithm is in progress or completed,
or whether the device is in Erase Suspend. Data# Polling is
valid after the rising edge of the final WE# pulse in the
program or erase command sequence.
During the Embedded Program algorithm, the device outputs
on DQ7 the complement of the datum programmed to DQ7.
This DQ7 status also applies to programming during Erase
Suspend. When the Embedded Program algorithm is com-
plete, the device outputs the datum programmed to DQ7. The
system must provide the program address to read valid status
information on DQ7. If a program address falls within a pro-
tected sector, Data# Polling on DQ7 is active for
approximately 2 μs, then the device returns to reading array
data.
During the Embedded Erase algorithm, Data# Polling pro-
duces a “0” on DQ7. When the Embedded Erase algorithm is
complete, or if the device enters the Erase Suspend mode,
Data# Polling produces a “1” on DQ7. This is analogous to
the complement/true datum output described for the
Embedded Program algorithm: the erase function changes
all the bits in a sector to “1”; prior to this, the device outputs
the “complement,” or “0.” The system must provide an
address within any of the sectors selected for erasure to read
valid status information on DQ7.
After an erase command sequence is written, if all sectors
selected for erasing are protected, Data# Polling on DQ7 is
active for approximately 100 μs, then the device returns to
reading array data. If not all selected sectors are protected,
the Embedded Erase algorithm erases the unprotected sec-
tors, and ignores the selected sectors that are protected.
When the system detects DQ7 changes from the comple-
ment to true data, it can read valid data at DQ7–DQ0 on the
following
read cycles. This is because DQ7 may change
asynchronously with DQ0–DQ6 while Output Enable (OE#) is
asserted low. The Data# Polling Timings (During Embedded
Algorithms) figure in the
AC Characteristics on page 24
section illustrates this.
Table 6 on page 19
shows the outputs for Data# Polling on
DQ7.
Figure 5, on page 17
shows the Data# Polling
algorithm.
Notes:
1.
VA = Valid address for programming. During a sector erase
operation, a valid address is an address within any sector
selected for erasure. During chip erase, a valid address is any
non-protected sector address.
DQ7 should be rechecked even if DQ5 = “1” because DQ7 may
change simultaneously with DQ5.
2.
Figure 5. Data# Polling Algorithm
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data
START
相關PDF資料
PDF描述
Am29F004B-B-70JF 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Am29F004B-B-70JI 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Am29F004B-T-70JE 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Am29F004B-T-70JF 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
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