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參數(shù)資料
| 型號： | Am29F004B-B-70JE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512畝× 8位）的CMOS 5.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 16/37頁 |
| 文件大?。?/td> | 993K |
| 代理商： | AM29F004B-B-70JE |
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14
Am29F004B
8/5/05
A D V A N C E I N F O R M A T I O N
cycles, followed by the program set-up command. The
program address and data are written next, which in turn ini-
tiate the Embedded Program algorithm. The system is
not
required to provide further controls or timings. The device
automatically provides internally generated program pulses
and verify the programmed cell margin. (Note that if the
device is in the temporary sector unprotect mode, the byte
program command sequence only requires two cycles.) The
Command Definitions table shows the address and data
requirements for the byte program command sequence.
When the Embedded Program algorithm is complete, the
device then returns to reading array data and addresses are
no longer latched. The system can determine the status of
the program operation by using DQ7 or DQ6. See
Write
Operation Status on page 17
for information on these status
bits.
Any commands written to the device during the Embedded
Program Algorithm are ignored. The Sector Erase command
sequence should be reinitiated once the device returns to
reading array data, to ensure data integrity.
Programming is allowed in any sequence and across sector
boundaries.
A bit cannot be programmed from a
0
back to
a
1
.
Attempting to do so may halt the operation and set DQ5
to
1
, or cause the Data# Polling algorithm to indicate the oper-
ation was successful. However, a succeeding read shows
that the data is still
0
. Only erase operations can convert a
0
to a
1
”.
Note:
See the appropriate Command Definitions table for program
command sequence.
Figure 3. Program Operation
Chip Erase Command Sequence
Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the chip erase command, which
in turn invokes the Embedded Erase algorithm. The device
does
not
require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any
controls or timings during these operations. (Note that if the
device is in the temporary sector unprotect mode, the chip
erase command sequence only requires four cycles.) The
Command Definitions table shows the address and data
requirements for the chip erase command sequence.
Any commands written to the chip during the Embedded
Erase algorithm are ignored. The Sector Erase command
sequence should be reinitiated once the device returns to
reading array data, to ensure data integrity.
The system can determine the status of the erase operation
by using DQ7, DQ6, or DQ2. See
Write Operation Status on
page 17
for information on these status bits. When the
Embedded Erase algorithm is complete, the device returns to
reading array data and addresses are no longer latched.
Figure 4, on page 15
illustrates the algorithm for the erase
operation. See the
Erase/Program Operations on page 25
for parameters, and to
Figure 12, on page 26
for timing
waveforms.
Sector Erase Command Sequence
Sector erase is a six-bus-cycle operation. The sector erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the address of the sector to be
erased, and the sector erase command. (Note that if the
device is in the temporary sector unprotect mode, the sector
erase command sequence only requires four cycles.) The
Command Definitions table shows the address and data
requirements for the sector erase command sequence.
The device does
not
require the system to preprogram the
memory prior to erase. The Embedded Erase algorithm auto-
matically programs and verifies the sector for an all zero data
pattern prior to electrical erase. The system is not required to
provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-
out of 50 μs begins. During the time-out period, additional
sector addresses and sector erase commands may be
written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector
to all sectors. The time between these additional cycles must
might not be accepted, and erasure may begin. It is recom-
mended that processor interrupts be disabled during this time
to ensure all commands are accepted. The interrupts can be
re-enabled after the last Sector Erase command is written. If
the time between additional sector erase commands can be
assumed to be less than 50 μs, the system need not monitor
DQ3.
Any command other than Sector Erase or Erase
Suspend during the time-out period resets the device to
reading array data.
The system must rewrite the command
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29F004B-B-70JF | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-B-70JI | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-T-70JE | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-T-70JF | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-B-70JK | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F010 | 制造商:Panasonic Industrial Company 功能描述:IC |
| AM29F010-120DGC1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120DGE1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (EXTEND TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120DGI1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (INDUSTRIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120JC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC 制造商:Analog Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC |
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