參數(shù)資料
型號(hào): AM29DS323DT50WMIN
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個(gè)M × 8位/ 2米x 16位),1.8伏的CMOS只,同時(shí)作業(yè)快閃記憶體
文件頁(yè)數(shù): 39/56頁(yè)
文件大?。?/td> 641K
代理商: AM29DS323DT50WMIN
October10,2006 23480A5
Am29DS323D
37
D A T A S H E E T
AC CHARACTERISTICS
Memory Array Read-Only Operations
Notes:
1. Not 100% tested.
2. See Figure 11 and
Table 16
for test specifications.
3. For data polling and toggle bit specifications, see “Data Polling and Toggle Bit” on page 44.
Parameter
Description
Test Setup
110
120
JEDEC
Std
Unit
t
AVAV
t
RC
Read Cycle Time
(Note 1)
Min
110
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
110
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
110
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
50
ns
t
EHQZ
t
DF
Chip Enable to Output High Z
(Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z
(Note 1)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold Time, Read Array
(Note 1)
Min
0
ns
t
OH
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
RH
t
OE
t
RH
0 V
RY/BY#
RESET#
t
DF
Figure 13.
Read Operation Timings
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