參數資料
型號: AM29DS323DT50WMIN
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個M × 8位/ 2米x 16位),1.8伏的CMOS只,同時作業(yè)快閃記憶體
文件頁數: 38/56頁
文件大?。?/td> 641K
代理商: AM29DS323DT50WMIN
36
Am29DS323D
23480A5 October10,2006
D A T A S H E E T
TEST CONDITIONS
Table 16.
Test Specifications
Key To Switching Waveforms
C
L
Device
Under
Test
Note:
Diodes are IN3064 or equivalent
Figure 11.
Test Setup
Test Condition
110
120
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–2.0 V
V
Input timing measurement
reference levels
1.0
V
Output timing measurement
reference levels
1.0
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
2.0 V
0.0 V
1.0 V
1.0 V
Output
Measurement Level
Input
Figure 12.
Input Waveforms and Measurement Levels
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