參數(shù)資料
型號(hào)： AM29BDS643DT9BWLI
廠商： ADVANCED MICRO DEVICES INC
元件分類(lèi)： PROM
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 13.5 ns, PBGA48
封裝： 11 X 10 MM, 0.50 MM PITCH, FBGA-48
文件頁(yè)數(shù)： 43/46頁(yè)
文件大?。?/td> 693K
代理商： AM29BDS643DT9BWLI
Am29BDS643D
43
P R E L I M I N A R Y
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 1.8 V V
CC
, 1 million cycles. Additionally,
programming typicals assume checkerboard pattern.
2.
Under worst case conditions of 90°C, V
CC
= 1.8 V 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 4 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
32 Kword
1.5
15
s
Excludes 00h programming
prior to erasure (Note 4)
4 Kword
0.3
5
Chip Erase Time
194
s
Word Programming Time
11.5
360
μs
Excludes system level
overhead (Note 5)
Accelerated Word Programming Time
4
210
μs
Chip Programming Time (Note 3)
48
144
s
Excludes system level
overhead (Note 5)
Accelerated Chip Programming Time
16
48
s
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
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