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參數(shù)資料
| 型號： | AM29BDS643DT9BWLI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 13.5 ns, PBGA48 |
| 封裝： | 11 X 10 MM, 0.50 MM PITCH, FBGA-48 |
| 文件頁數(shù)： | 21/46頁 |
| 文件大?。?/td> | 693K |
| 代理商： | AM29BDS643DT9BWLI |
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Am29BDS643D
21
P R E L I M I N A R Y
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard program operation. Refer to the
Write Operation Status section for more information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Functions and Autoselect Command
Sequence sections for details.
To resume the sector erase operation, the system must
write the Erase Resume command. The bank address
of the erase-suspended bank is required when writing
this command. Further writes of the Resume command
are ignored. Another Erase Suspend command can be
written after the chip has resumed erasing.
Figure 2.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 4 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
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