- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375289 > AM29BDS320GBD4VMI (SPANSION LLC) 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29BDS320GBD4VMI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 59/74頁 |
| 文件大?。?/td> | 701K |
| 代理商： | AM29BDS320GBD4VMI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁當前第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁
October 1, 2003 27243B1
Am29BDS320G
57
P r e l i m i n a r y
AC Characteristics
Erase/Program Operations
Notes:
1. Not 100% tested.
2. In asynchronous timing, addresses are latched on the falling edge of WE#. In synchronous mode, addresses are
latched on the first of either the rising edge of AVD# or the active edge of CLK.
3. See the “Erase and Programming Performance” section for more information.
4. Does not include the preprogramming time.
Parameter
Description
All
Speed
Options
Unit
J EDEC
Standard
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
80
ns
t
AVWL
t
AS
Address Setup Time
(Note 2)
Synchronous
Min
5
ns
Asynchronous
0
t
WLAX
t
AH
Address Hold Time
(Note 2)
Synchronous
Min
7
ns
Asynchronous
45
t
ACS
t
ACH
t
DS
t
DH
t
GHWL
t
CAS
t
CH
t
WP
t
WPH
t
SR/W
t
WHWH1
t
WHWH1
Address Setup Time to CLK (Note 2)
Min
5
ns
Address Hold Time to CLK (Note 2)
Min
7
ns
t
DVWH
t
WHDX
t
GHWL
Data Setup Time
Min
45
ns
Data Hold Time
Min
0
ns
Read Recovery Time Before Write
Min
0
ns
CE# Setup Time to AVD#
Min
0
ns
t
WHEH
t
WLWH
t
WHWL
CE# Hold Time
Min
0
ns
Write Pulse Width
Min
50
ns
Write Pulse Width High
Min
30
ns
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 3)
Typ
8
μs
Accelerated Programming Operation (Note 3)
Typ
2.5
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Notes 3, 4)
Typ
0.4
sec
Chip Erase Operation (Notes 3, 4)
28
t
VID
t
VIDS
t
VCS
t
CSW1
t
CSW2
t
CHW
t
CS
t
AVSW
t
AVHW
t
AVHC
t
AVDP
V
ACC
Rise and Fall Time
V
ACC
Setup Time (During Accelerated Programming)
V
CC
Setup Time
Clock Setup Time to WE# (Asynchronous)
Min
500
ns
Min
1
μs
Min
50
μs
Min
5
ns
Clock Setup Time to WE# (Synchronous)
Min
1
ns
Clock Hold Time from WE#
Max
1
ns
t
ELWL
CE# Setup Time to WE#
Min
0
ns
AVD# Setup Time to WE#
Min
5
ns
AVD# Hold Time to WE#
Min
5
ns
AVD# Hold Time to CLK
Min
5
ns
AVD# Low Time
Min
12
ns
相關PDF資料 |
PDF描述 |
|---|---|
| AM29BDS320GBD8VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS320GBD9VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS320GTC4VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS320GTC8VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS320GTC9VMI | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29BDS643GT5KVAI | 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 64MBIT 4MX16 55NS 44FBGA - Trays |
| AM29BL802CB-65RZET | 制造商:Spansion 功能描述: |
| AM29C01WW WAF | 制造商:Advanced Micro Devices 功能描述: |
| AM29C10API | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| AM29C10AWW DIE | 制造商:Advanced Micro Devices 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。