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參數(shù)資料
| 型號： | AM29BDS320GBD4VMI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 46/74頁 |
| 文件大小： | 701K |
| 代理商： | AM29BDS320GBD4VMI |
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44
Am29BDS320G
27243B1 October 1, 2003
P r e l i m i n a r y
DC Characteristics
CMOS Compatible
Notes:
1.
2. All
I
CC
specifications are tested with V
IO
= V
CC.
3.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
4.
I
CC
active while Embedded Erase or Embedded Program is in progress.
5.
Device enters automatic sleep mode when addresses are stable for t
ACC
+ 60 ns. Typical sleep mode current is equal to I
CC3
.
Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
Parameter
Description
Test Conditions ( Note 1,2)
Min
Typ.
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
± 1
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
max
± 1
μA
I
CCB
V
CC
Active Burst Read Current
CE# = V
IL
, OE# = V
IH
, WE# = V
IH,
54 MHz
10
20
mA
CE# = V
IL
, OE# = V
IH
, WE# = V
IH,
40 MHz
8
16
mA
I
IO
V
IO
Non-active Output
V
IO
= 1.8 V, OE# = V
IH
0.2
10
μA
V
IO
= 3.0 V, OE# = V
IH
0.2
10
μA
I
CC1
V
CC
Active Asynchronous Read
Current (Note 3)
CE# = V
IL
, OE# = V
IH
,
WE# = V
IH
5 MHz
12
16
mA
1 MHz
3.5
5
mA
I
CC2
V
CC
Active Write Current (Note 4) CE# = V
IL
, OE# = V
IH
, V
PP
= V
IH
15
40
mA
I
CC3
V
CC
Standby Current (Note 5)
CE# = RESET# = V
CC
± 0.2 V
0.2
10
μA
I
CC4
V
CC
Reset Current
RESET# = V
IL,
CLK = V
IL
0.2
10
μA
I
CC5
V
CC
Active Current
(Read While Write)
CE# = V
IL
, OE# = V
IH
25
60
mA
V
IL
Input Low Voltage
V
IO
= 1.8 V
–0.5
0.2
V
V
IO
= 3.0 V
–0.5
0.4
V
V
IH
Input High Voltage
V
IO
= 1.8 V
V
IO
– 0.2
V
IO
+ 0.2
V
V
IO
= 3.0 V
V
IO
– 0.4
V
IO
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100 μA, V
CC
= V
CC
min
,
V
IO
= V
IO min
0.1
V
V
OH
Output High Voltage
I
OH
= –100 μA, V
CC
= V
CC
min
,
V
IO
= V
IO min
V
IO
– 0.1
V
V
ID
Voltage for Accelerated Program
11.5
12.5
V
V
LKO
Low V
CC
Lock-out Voltage
1.0
1.4
V
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