參數(shù)資料
型號(hào): ADUC816BCP
廠商: Analog Devices Inc
文件頁(yè)數(shù): 66/68頁(yè)
文件大?。?/td> 0K
描述: IC MCU 8K FLASH ADC/DAC 56LFCSP
標(biāo)準(zhǔn)包裝: 1
系列: MicroConverter® ADuC8xx
核心處理器: 8052
芯體尺寸: 8-位
速度: 12.58MHz
連通性: I²C,SPI,UART/USART
外圍設(shè)備: PSM,溫度傳感器,WDT
輸入/輸出數(shù): 34
程序存儲(chǔ)器容量: 8KB(8K x 8)
程序存儲(chǔ)器類型: 閃存
EEPROM 大小: 640 x 8
RAM 容量: 256 x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 7x16b; D/A 1x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 56-VFQFN 裸露焊盤,CSP
包裝: 托盤
產(chǎn)品目錄頁(yè)面: 738 (CN2011-ZH PDF)
REV. 0
–7–
ADuC816
Parameter
ADuC816BS
Unit
Test Conditions/Comments
POWER REQUIREMENTS (continued)
Power Supply Currents Normal Mode
16, 17
DVDD Current
4
mA max
DVDD = 4.75 V to 5.25 V, Core CLK = 1.57 MHz
2.1
mA max
DVDD = 2.7 V to 3.6 V, Core CLK = 1.57 MHz
AVDD Current
170
μA max
AVDD = 5.25 V, Core CLK = 1.57 MHz
DVDD Current
15
mA max
DVDD = 4.75 V to 5.25 V, Core CLK = 12.58 MHz
8
mA max
DVDD = 2.7 V to 3.6 V, Core CLK = 12.58 MHz
AVDD Current
170
μA max
AVDD = 5.25 V, Core CLK = 12.58 MHz
Power Supply Currents Idle Mode
16, 17
DVDD Current
1.2
mA max
DVDD = 4.75 V to 5.25 V, Core CLK = 1.57 MHz
750
μA typ
DVDD = 2.7 V to 3.6 V, Core CLK = 1.57 MHz
AVDD Current
140
μA typ
Measured @ AVDD = 5.25 V, Core CLK = 1.57 MHz
DVDD Current
2
mA typ
DVDD = 4.75 V to 5.25 V, Core CLK = 12.58 MHz
1
mA typ
DVDD = 2.7 V to 3.6 V, Core CLK = 12.58 MHz
AVDD Current
140
μA typ
Measured at AVDD = 5.25 V, Core CLK = 12.58 MHz
Power Supply Currents Power-Down Mode
16, 17
Core CLK = 1.57 MHz or 12.58 MHz
DVDD Current
50
μA max
DVDD = 4.75 V to 5.25 V, Osc. On, TIC On
20
μA max
DVDD = 2.7 V to 3.6 V, Osc. On, TIC On
AVDD Current
1
μA max
Measured at AVDD = 5.25 V, Osc. On or Osc. Off
DVDD Current
20
μA max
DVDD = 4.75 V to 5.25 V, Osc. Off
5
μA typ
DVDD = 2.7 V to 3.6 V, Osc. Off
Typical Additional Power Supply Currents
Core CLK = 1.57 MHz, AVDD = DVDD = 5 V
(AIDD and DIDD)
PSM Peripheral
50
μA typ
Primary ADC
1
mA typ
Auxiliary ADC
500
μA typ
DAC
150
μA typ
Dual Current Sources
400
μA typ
NOTES
1Temperature Range –40
°C to +85°C.
2These numbers are not production tested but are guaranteed by Design and/or Characterization data on production release.
3The primary ADC is factory-calibrated at 25
°C with AV
DD = DVDD = 5 V yielding this full-scale error. If user power supply or temperature conditions are signifi-
cantly different from these, an Internal Full-Scale Calibration will restore this error to this level.
4Gain Error Drift is a span drift. To calculate Full-Scale Error Drift, add the Offset Error Drift to the Gain Error Drift times the full-scale input.
5The auxiliary ADC is factory-calibrated at 25
°C with AV
DD = DVDD = 5 V yielding this full-scale error of –2.5 LSB. A system zero-scale and full-scale calibration
will remove this error altogether.
6DAC linearity and AC Specifications are calculated using:
reduced code range of 48 to 4095, 0 to VREF
reduced code range of 48 to 3995, 0 to VDD.
7Gain Error is a measure of the span error of the DAC.
8In general terms, the bipolar input voltage range to the primary ADC is given by Range
ADC =
±(V
REF 2
RN)/125, where:
VREF = REFIN(+) to REFIN(–) voltage and VREF = 1.25 V when internal ADC VREF is selected.
RN = decimal equivalent of RN2, RN1, RN0, e.g., V REF = 2.5 V and RN2, RN1, RN0 = 1, 1, 0 the RangeADC =
±1.28 V.
In unipolar mode the effective range is 0 V to 1.28 V in our example.
91.25 V is used as the reference voltage to the ADC when internal V
REF is selected via XREF0 and XREF1 bits in ADC0CON and ADC1CON respectively.
10In bipolar mode, the Auxiliary ADC can only be driven to a minimum of A
GND – 30 mV as indicated by the Auxiliary ADC absolute AIN voltage limits. The bipolar
range is still –VREF to +VREF; however, the negative voltage is limited to –30 mV.
11Pins configured in I2C-compatible mode or SPI mode, pins configured as digital inputs during this test.
12Pins configured in I2C-compatible mode only.
13Flash/EE Memory Reliability Characteristics apply to both the Flash/EE program memory and Flash/EE data memory.
14Endurance is qualified to 100 Kcycles as per JEDEC Std. 22 method A117 and measured at –40
°C, +25°C and +85°C, typical endurance at 25°C is 700 Kcycles.
15Retention lifetime equivalent at junction temperature (T
J) = 55
°C as per JEDEC Std. 22, Method A117. Retention lifetime based on an activation energy of 0.6eV
will derate with junction temperature as shown in Figure 27 in the Flash/EE Memory description section of this data sheet.
16Power Supply current consumption is measured in Normal, Idle, and Power-Down Modes under the following conditions:
Normal Mode: Reset = 0.4 V, Digital I/O pins = open circuit, Core Clk changed via CD bits in PLLCON, Core Executing internal software loop.
Idle Mode: Reset = 0.4 V, Digital I/O pins = open circuit, Core Clk changed via CD bits in PLLCON, PCON.0 = 1, Core Execution suspended in idle mode.
Power-Down Mode: Reset = 0.4 V, All P0 pins and P1.2–P1.7 pins = 0.4 V, All other digital I/O pins are open circuit, Core Clk changed via CD bits in PLLCON,
PCON.1 = 1, Core Execution suspended in power-down mode, OSC turned ON or OFF via OSC_PD bit (PLLCON.7) in PLLCON SFR.
17DV
DD power supply current will typically increase by 3 mA (3 V operation) and 10 mA (5 V operation) during a Flash/EE memory program or erase cycle.
Specifications subject to change without notice
REV. A
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