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參數(shù)資料
| 型號： | 934021010127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 934021010127 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DX
Fig.12. Forward bias safe operating area. T
hs = 25C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30
± 5 newton force on the centre of
the envelope.
Fig.13. Forward bias safe operating area. T
hs = 25C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30
± 5 newton force on the centre of
the envelope.
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
October 2002
5
Rev 3.000
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