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參數(shù)資料
| 型號(hào)： | 934021010127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 934021010127 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DX
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
2.0
mA
T
j = 125 C
I
EBO
Emitter cut-off current
V
EB = 7.5 V; IC = 0 A
140
-
390
mA
BV
EBO
Emitter-base breakdown voltage
I
B = 600 mA
7.5
13.5
-
V
R
be
Base-emitter resistance
V
EB = 7.5 V
-
33
-
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
700
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltages I
C = 4.5 A; IB = 1.1 A
-
5.0
V
CEsat
I
C = 4.5 A; IB = 1.29 A
-
1.0
V
BEsat
Base-emitter saturation voltage
I
C = 4.5 A; IB = 1.7 A
-
1.3
V
h
FE
DC current gain
I
C = 1 A; VCE = 5 V
7
13
23
h
FE
I
C = 4.5 A; VCE = 1 V
4
5.5
7.0
V
F
Diode forward voltage
I
F = 4.5 A
-
1.6
2.0
V
DYNAMIC CHARACTERISTICS
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E = 0 A; VCB = 10 V; f = 1 MHz
80
-
pF
Switching times (16 kHz line
I
Csat = 4.5 A; IB(end) = 1.1 A; LB = 6 H;
deflection circuit)
-V
BB = 4 V; (-dIB/dt = 0.6 A/s)
t
s
Turn-off storage time
5.0
6.0
s
t
f
Turn-off fall time
0.4
0.6
s
Switching times (38 kHz line
I
Csat = 4.0 A; IB(end) = 0.9 A; LB = 6 H;
deflection circuit)
-V
BB = 4 V; (-dIB/dt = 0.6 A/s)
t
s
Turn-off storage time
4.7
5.7
s
t
f
Turn-off fall time
0.25
0.35
s
2 Measured with half sine-wave voltage (curve tracer).
October 2002
2
Rev 3.000
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