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參數(shù)資料
| 型號： | 934021010127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 934021010127 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DX
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit.
Fig.4. Typical DC current gain. h
FE = f (IC)
parameter V
CE
Fig.5. Typical base-emitter saturation voltage.
V
BEsat = f (IC); parameter IC/IB
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
TRANSISTOR
DIODE
0.01
1
IC / A
100
10
1
0.1
10
Tj = 25 °C
Tj = 125 °C
5 V
h FE
1 V
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
- IBM
0.1
1
10
IC / A
VBESAT / V
BU2508DF
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
+ 150 v nominal
adjust for ICsat
1mH
12nF
D.U.T.
LB
IBend
-VBB
Rbe
0.1
1
10
IC / A
VCESAT / V
BU2508DF
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Tj = 25 C
Tj = 125 C
IC/IB=
4
5
3
October 2002
3
Rev 3.000
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