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參數(shù)資料
| 型號： | 934021010127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 934021010127 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DX
Fig.7. Typical base-emitter saturation voltage.
V
BEsat = f (IB); parameter IC
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat = f (IB); parameter IC
Fig.9. Typical turn-off losses. T
j = 85C
Eoff = f (I
B); parameter IC; f = 16 kHz
Fig.10. Typical collector storage and fall time.
ts = f (I
B); tf = f (IB); parameter IC; Tj = 85C; f = 16 kHz
Fig.11. Normalised power dissipation.
PD% = 100
P
D/PD 25C = f (Ths)
0
1
2
3
4
IB / A
VBESAT / V
BU2508DF
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
6A
4.5A
3A
2A
0.1
1
10
IB / A
ts, tf / us
BU2508DF
12
11
10
9
8
7
6
5
4
3
2
1
0
IC =
4.5A
3.5A
ts
tf
0.1
1
10
IB / A
VCESAT / V
BU2508DF
10
1
0.1
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
IC=2A
3A
4.5A
6A
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0.1
1
10
IB / A
Eoff / uJ
BU2508DF
1000
100
10
IC = 4.5A
3.5A
October 2002
4
Rev 3.000
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