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參數(shù)資料
| 型號： | 934018830235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 9/16頁 |
| 文件大小： | 104K |
| 代理商： | 934018830235 |
2000 May 30
2
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFR540
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
RF front end wideband applications in
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, satellite TV tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a SOT23 plastic package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT23.
fpage
MSB003
Top view
12
3
Marking code: N29.
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage
RBE =0
15
V
IC
DC collector current
120
mA
Ptot
total power dissipation
Ts ≤ 70 °C; note 1
500
mW
hFE
DC current gain
IC = 40 mA; VCE = 8 V
100
120
250
Cre
feedback capacitance
IC =ic = 0; VCB = 8 V; f = 1 MHz
0.6
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz
9
GHz
GUM
maximum unilateral
power gain
IC = 40 mA; VCE =8V;
Tamb =25 °C; f = 900 MHz
14
dB
IC = 40 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz
7
dB
s
21
2
insertion power gain
IC = 40 mA; VCE =8V;
Tamb =25 °C; f = 900 MHz
12
13
dB
F
noise gure
Γ
s = Γopt; IC = 10 mA; VCE =8V;
Tamb =25 °C; f = 900 MHz
1.3
1.8
dB
Γs = Γopt;IC = 40 mA; VCE =8V;
Tamb =25 °C; f = 900 MHz
1.9
2.4
dB
Γ
s = Γopt;IC = 10 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz
2.1
dB
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