參數(shù)資料
型號: 934018830235
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC, SST, 3 PIN
文件頁數(shù): 11/16頁
文件大?。?/td> 104K
代理商: 934018830235
2000 May 30
4
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFR540
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
2. IC = 40 mA; VCE =8 V; RL =50 ;
Tamb =25 °C; f = 900 MHz;
fp = 900 MHz; fq = 902 MHz;
measured at f(2pq) = 898 MHz and f(2qp) = 904 MHz.
3. dim = 60 dB (DIN 45004B);
Vp =VO; Vq =VO 6 dB; f p = 795.25 MHz;
VR =VO 6 dB; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz; preliminary data.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
ICBO
collector cut-off current
IE = 0; VCB =8V
50
nA
hFE
DC current gain
IC = 40 mA; VCE = 8 V
100
120
250
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
2
pF
Cc
collector capacitance
IE =ie = 0; VCB =8V; f=1MHz
0.9
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
0.6
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz
9
GHz
GUM
maximum unilateral
power gain; note 1
IC = 40 mA; VCE =8V;
Tamb =25 °C; f = 900 MHz
14
dB
IC = 40 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz
7
dB
|s
21|
2
insertion power gain
IC = 40 mA; VCE =8V;
Tamb =25 °C; f = 900 MHz
12
13
dB
F
noise gure
Γ
s = Γopt; IC = 10 mA; VCE =8V;
Tamb =25 °C; f = 900 MHz
1.3
1.8
dB
Γ
s = Γopt; IC = 40 mA; VCE =8V;
Tamb =25 °C; f = 900 MHz
1.9
2.4
dB
Γ
s = Γopt; IC = 10 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz
2.1
dB
PL1
output power at 1 dB gain
compression
IC = 40 mA; VCE =8V; RL =50 ;
Tamb =25 °C; f = 900 MHz
21
dBm
ITO
third order intercept point
note 2
34
dBm
Vo
output voltage; note 3
IC = 40 mA; VCE =8V;
ZL =ZS =75 ;Tamb =25 °C
550
mV
G
UM
10
s
21
2
1s
11
2
() 1s
22
2
()
-------------------------------------------------------- dB.
log
=
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