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參數(shù)資料
| 型號(hào)： | 934018830235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁(yè)數(shù)： | 14/16頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | 934018830235 |
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2000 May 30
7
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFR540
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
VCE =8V.
handbook, halfpage
5
0
1
2
5
0
5
10
Gass
(dB)
15
20
3
Fmin
(dB)
IC (mA)
4
MRA698
1
102
10
2000 MHz
1000 MHz
2000 MHz
1000 MHz
900 MHz
500 MHz
f = 900 MHz
Fmin
Gass
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
VCE =8V.
handbook, halfpage
5
0
1
2
5
0
5
10
Gass
(dB)
15
20
3
Fmin
(dB)
f (MHz)
4
MRA699
102
104
103
Gass
40 mA
10 mA
Fmin
40 mA
IC = 10 mA
handbook, full pagewidth
MRA700
0
0.2
0.6
0.4
0.8
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2
0.5
F = 1.5 dB
1
2
5
180
°
135°
90°
45°
0
°
45
°
90
°
135
°
F = 2 dB
F = 3 dB
Fmin = 1.3 dB
ΓOPT
stability
circle
pot. unst.
region
Fig.12 Noise circle figure.
Zo =50 .
VCE = 8 V; IC = 10 mA; f = 900 MHz.
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