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參數(shù)資料
| 型號： | 934018830235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 934018830235 |
2000 May 30
6
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFR540
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
Fig.6 Gain as a function of collector current.
VCE = 8 V; f = 900 MHz.
handbook, halfpage
020
IC (mA)
40
60
25
0
20
15
gain
(dB)
10
5
MRA690
GUM
Gmax
MSG
Fig.7 Gain as a function of collector current.
VCE = 8 V; f = 2 GHz.
handbook, halfpage
020
IC (mA)
40
60
25
0
20
15
gain
(dB)
10
5
MRA691
GUM
Gmax
Fig.8 Gain as a function of frequency.
VCE = 8 V; Ic =10mA.
handbook, halfpage
50
gain
(dB)
0
10
MRA692
10
2
103
10
4
10
20
30
f (MHz)
40
MSG
GUM
Gmax
Fig.9 Gain as a function of frequency.
VCE = 8 V; Ic =40mA.
handbook, halfpage
50
gain
(dB)
0
10
MRA693
10
2
103
10
4
10
20
30
f (MHz)
40
MSG
GUM
Gmax
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