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參數(shù)資料
| 型號(hào)： | 934013320112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOT-115D, 9 PIN |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 934013320112 |
Philips Semiconductors
PHP/PHB/PHE95N03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 01 February 2002
7 of 14
9397 750 09285
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 175 °C; VDS > ID × RDSon
VGS =0V;f=1MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (
oC)
VGS(th)
(V)
max
typ
min
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0
0.5
1
1.5
2
2.5
3
VGS (V)
ID
(A)
max
typ
min
03aa81
0
30
60
90
0
1530
4560
75
ID (A)
gfs
(S)
Tj = 25 C
175 C
VDS > ID x RDSon
03ad83
102
103
104
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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