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參數(shù)資料
| 型號： | 934013320112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOT-115D, 9 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 934013320112 |
Philips Semiconductors
PHP/PHB/PHE95N03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 01 February 2002
5 of 14
9397 750 09285
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
25
--V
Tj = 55 °C
22
--V
VGS(th)
gate-source threshold voltage
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS =25V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±5 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
-
7.5
9
m
Tj = 175 °C
-
13
15.5
m
VGS =10V; ID =25A;
Tj =25 °C
-
57m
Dynamic characteristics
gfs
forward transconductance
-50
-
S
Qg(tot)
total gate charge
ID = 50 A; VDD =12V; VGS = 4.5 V;
-43
-
nC
Qgs
gate-source charge
-
12
-
nC
Qgd
gate-drain (Miller) charge
-
16
-
nC
Ciss
input capacitance
-2200 -pF
Coss
output capacitance
-
770
-
pF
Crss
reverse transfer capacitance
-
500
-
pF
td(on)
turn-on delay time
VDD =15V; ID = 15 A; VGS =10V;
RG =6 ; resistive load
-
1020ns
tr
turn-on rise time
-
30
50
ns
td(off)
turn-off delay time
-
110
140
ns
tf
turn-off fall time
-
80
100
ns
Source-drain diode
VSD
-
0.85
1.2
V
IS =40A;VGS = 0 V
-
0.9
-
V
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