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參數(shù)資料
| 型號(hào)： | 934013320112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOT-115D, 9 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 934013320112 |
Philips Semiconductors
PHP/PHB/PHE95N03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 01 February 2002
2 of 14
9397 750 09285
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
-
25
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
-
75
A
Ptot
total power dissipation
Tmb =25 °C
-
125
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID =25A
5
7
m
VGS =5V; ID =25A
7.5
9
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
-
25
V
VDGR
drain-gate voltage (DC)
Tj =25to175 °C; RGS =20k
-25
V
ID
drain current (DC)
-75
A
-61
A
VGS
gate-source voltage
-
±20
V
IDM
peak drain current
-
240
A
Ptot
total power dissipation
-
125
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
-
75
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
-
240
A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy
unclamped inductive load;
ID =75A;tp = 0.1 ms; VDD =15V;
RGS =50 ; VGS = 5V; starting Tj =25 °C;
-
120
mJ
IDS(AL)S
non-repetitive avalanche current
unclamped inductive load;
VDD =15V;RGS =50 ; VGS =5V;
starting Tj =25 °C
-
75
A
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