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參數(shù)資料
| 型號： | 934013320112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOT-115D, 9 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 51K |
| 代理商： | 934013320112 |
Philips Semiconductors
PHP/PHB/PHE95N03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 01 February 2002
6 of 14
9397 750 09285
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS >ID x RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ad78
0
15
30
45
60
75
0
0.4
0.8
1.2
1.6
2
VDS (V)
ID
(A)
3 V
5 V
Tj = 25 C
VGS = 2.5 V
10 V
3.5 V
03ad80
0
15
30
45
60
75
01234
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25 C
175 C
03ad79
0
0.01
0.02
0.03
0.04
0.05
0
1530
456075
ID (A)
RDSon
(
)
2.5 V
VGS = 3 V
Tj = 25 C
5V
10 V
3.5 V
03ad57
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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