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參數(shù)資料
| 型號(hào)： | 934009540114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 8/14頁 |
| 文件大小： | 125K |
| 代理商： | 934009540114 |
1997 Feb 18
3
Philips Semiconductors
Product specication
NPN microwave power transistor
RX1214B350Y
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
65
V
VCEO
collector-emitter voltage
open base
20
V
VCES
collector-emitter voltage
RBE =0
65
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
tp ≤ 130 s; δ≤ 6%
25
A
Ptot
total power dissipation
Tmb <75 °C;
tp ≤ 30 s; δ≤ 1%
750
W
Tstg
storage temperature
65
200
°C
Tj
operating junction temperature
200
°C
Tsld
soldering temperature
t
≤ 10 s; note 1
235
°C
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
Ptot max = 750 W; tp ≤ 30 s; δ≤ 1%.
handbook, halfpage
800
600
200
0
400
MGA259
Ptot
(W)
–100
0
100
300
200
Tamb (
oC)
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