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參數(shù)資料
| 型號(hào)： | 934009540114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 11/14頁 |
| 文件大小： | 125K |
| 代理商： | 934009540114 |
1997 Feb 18
6
Philips Semiconductors
Product specication
NPN microwave power transistor
RX1214B350Y
List of components (see Fig.3)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1, L2, L3
3 turns 0.65 mm diameter
copper wire
int dia.=4mm;
length of turn = 3 mm
C1
capacitor
100 pF
ATC, ref. 100B101KP50X
C2
tantalum capacitor
10
F, 50 V
C3
electrolytic capacitor
470
F, 63 V
C4
feedthrough bypass capacitor
Erie, ref.1250-003
C5
variable gigatrim capacitor
0.8 - 8 pF
Tekelec, ref.729.1
C6
capacitor
4.7 nF
R1
resistor
4.7
The test jig consists of two circuits (input and output), each being 30 mm x 40 mm in size. The two circuits are mounted
on a 10 mm thick hard aluminium alloy block. A recess should be machined in the aluminium block in which the transistor
can be mounted. The mounting surface must be lapped to a surface roughness of Ra <0.5
m and the sum of the depth
of the recess and the thickness of the circuits should not exceed the specified minimum dimension between mounting
face and the leads of the transistor. Tolerances on this dimension may be absorbed by placing a gold plated metal shim
under the leads, close to the body of the transistor.
Fig.4 Power gain as a function of frequency.
Class C pulse operation; tp = 130 s; δ = 6%.
VCC = 50 V; PO = 280 W.
Broadband test circuit as shown in Fig.3.
handbook, halfpage
1.1
1.2
1.3
1.5
10
0
8
MGA261
1.4
6
4
2
f (GHz)
Gp
(dB)
Fig.5
Collector efficiency as a function
of frequency.
handbook, halfpage
1.1
1.2
1.3
1.5
50
40
48
MGA260
1.4
46
44
42
f (GHz)
η
C
(%)
Class C pulse operation; tp = 130 s; δ = 6%.
VCC = 50 V; PO = 280 W.
Broadband test circuit as shown in Fig.3.
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