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參數(shù)資料
| 型號(hào)： | 934009540114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 125K |
| 代理商： | 934009540114 |
1997 Feb 18
2
Philips Semiconductors
Product specication
NPN microwave power transistor
RX1214B350Y
FEATURES
Suitable for short and medium
pulse applications up to 1 ms/10%
Internal input prematching
networks allow an easier design of
circuits
Diffused emitter ballasting resistors
improve ruggedness
Interdigitated emitter-base
structure provides high emitter
efficiency
Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power
sharing and reduces thermal
resistance.
APPLICATIONS
Common base, class C, broadband,
pulsed power amplifiers for L-Band
radar applications in the
1.2 to 1.4 GHz band. Also suitable for
medium pulse, heavy duty operation
within this band.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with base connected to
flange.
QUICK REFERENCE DATA
Microwave performance up to Tmb =25 °C in a common base class C
broadband amplier.
MODE OF
OPERATION
CONDITIONS
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Class C
tp = 130 s;
δ =6%
1.2 to 1.4
50
280
≥7
≥40
PINNING - SOT439A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to ange
Fig.1 Simplified outline and symbol.
handbook, 4 columns
e
c
b
MAM045
1
2
Top view
3
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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