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參數(shù)資料
| 型號： | 934009540114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 125K |
| 代理商： | 934009540114 |
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RX1214B350Y
Information as of 2000-08-28
RX1214B350Y; NPN microwave power transistor
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.
l
Suitable for short and medium pulse applications up to 1 ms/10%
l
Internal input prematching networks allow an easier design of circuits
l
Diffused emitter ballasting resistors improve ruggedness
l
Interdigitated emitter-base structure provides high emitter efficiency
l
Gold metallization with barrier realizes very stable characteristics and excellent lifetime
l
Multicell geometry improves power sharing and reduces thermal resistance.
Common base, class C, broadband, pulsed power amplifiers for L-Band radar applications in the 1.2 to 1.4 GHz band. Also suitable for
medium pulse, heavy duty operation within this band.
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Datasheet
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