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參數(shù)資料
| 型號： | 934008060114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大小： | 121K |
| 代理商： | 934008060114 |
1997 Feb 14
4
Philips Semiconductors
Product specication
NPN microwave power transistors
RX1214B80W; RX1214B130Y
THERMAL CHARACTERISTICS
Notes
1. See
“Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tmb =25 °C unless otherwise specied.
APPLICATION INFORMATION
Microwave performance up to Tmb =25 °C in a common-base test circuit as shown in Fig.3.
List of components (see Fig.3)
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base Tj = 120 °C
1.75
K/W
Rth mb-h
thermal resistance from mounting base to heatsink note 1
0.2
K/W
Zth j-h
thermal impedance from junction to heatsink
tp = 150 s; δ = 5%;
notes 1 and 2
0.4
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =50V
6mA
IEBO
emitter cut-off current
IC = 0; VEB = 1.5 V
0.6
mA
V(BR)CES
collector-emitter breakdown voltage
IC = 60 mA; VBE =0
60
V
MODE OF
OPERATION
CONDITIONS
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Class C
tp = 150 s; δ = 5%
1.2 to 1.4
50
≥130; typ. 140
≥7; typ. 7.5
≥35; typ. 39
tp = 500 s; δ = 10%
1.2 to 1.4
40
typ. 80
typ. 8.5
typ. 40
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1
0.5 mm copper wire
total length = 15 mm
C1
trimmer capacitor
0.6
5 pF
Tekelec, ref AT3-7271SL
C2
chip capacitor
C3
tantalum capacitor
10
F, 50 V
C4
feedthrough bypass capacitor
Erie, ref.1250-003
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