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參數(shù)資料
| 型號： | 934008060114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 934008060114 |
1997 Feb 14
3
Philips Semiconductors
Product specication
NPN microwave power transistors
RX1214B80W; RX1214B130Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
65
V
VCEO
collector-emitter voltage
open base
15
V
VCES
collector-emitter voltage
RBE =0
60
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
tp ≤ 150 s; δ≤ 5%
9A
Ptot
total power dissipation
Tmb <75 °C; tp ≤ 150 s; δ≤ 5%
280
W
Tstg
storage temperature
65
+200
°C
Tj
operating junction temperature
200
°C
Tsld
soldering temperature
t
≤ 10 s; note 1
235
°C
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
tp = 150 s; δ = 5%; Ptot max = 280 W.
handbook, halfpage
300
200
100
0
MGA256
50
Ptot
(W)
150
Tmb (
oC)
250
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