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參數(shù)資料
| 型號： | 934008060114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大小： | 121K |
| 代理商： | 934008060114 |
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RX1214B80W;
RX1214B130Y
RX1214B80W;
RX1214B130Y
Information as of 2000-08-28
RX1214B80W; RX1214B130Y; NPN microwave power transistors
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.
l
Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor
l
Diffused emitter ballasting resistors improve ruggedness
l
Interdigitated emitter-base structure provides high emitter efficiency
l
Gold metallization with barrier realizes very stable characteristics and excellent lifetime
l
Multicell geometry improves power sharing and reduces thermal resistance
l
Internal input and output prematching networks allow an easier design of circuits.
Common-base class C broadband pulsed power amplifiers for radar applications in the 1.2 to 1.4 GHz band. Also suitable for long pulse,
heavy duty operation within this band.
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