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參數資料
| 型號： | 934008060114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC PACKAGE-2 |
| 文件頁數： | 11/14頁 |
| 文件大小： | 121K |
| 代理商： | 934008060114 |
1997 Feb 14
6
Philips Semiconductors
Product specication
NPN microwave power transistors
RX1214B80W; RX1214B130Y
Fig.4 Power gain as a function of frequency.
Class C pulse operation; tp = 500 s; δ = 5%.
VCC = 50 V; PO = 130 W.
Broadband test circuit as shown in Fig.3.
handbook, halfpage
1.1
1.2
Gp
(dB)
1.3
1.5
10
5
9
MGA258
1.4
8
7
6
f (GHz)
Fig.5
Collector efficiency as a function
of frequency.
handbook, halfpage
1.1
1.2
1.3
1.5
45
35
43
MGA257
1.4
41
39
37
f (GHz)
η
C
(%)
Class C pulse operation; tp = 500 s; δ = 5%.
VCC = 50 V; PO = 130 W.
Broadband test circuit as shown in Fig.3.
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