參數(shù)資料
型號(hào)： 934006630112
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-4
文件頁(yè)數(shù)： 8/13頁(yè)
文件大小： 105K
代理商： 934006630112
September 1992
4
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF248
CHARACTERISTICS (per section)
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 100 mA
65
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
5mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
1
A
VGS(th)
gate-source threshold voltage
ID = 100 mA; VDS = 10 V
2
4.5
V
GS
gate-source voltage difference
of both transistor sections
ID = 100 mA; VDS = 10 V
100
mV
gfs
forward transconductance
ID = 8 A; VDS = 10 V
5
7.5
S
gfs1/gfs2
forward transconductance ratio
of both transistor sections
ID = 8 A; VDS = 10 V
0.9
1.1
RDS(on)
drain-source on-state resistance
ID = 8 A; VGS = 10 V
0.1
0.15
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
37
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
500
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
360
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
46
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
VDS = 10 V.
handbook, halfpage
0
5
MGP204
101
110
4
3
2
1
ID (A)
T.C.
(mV/K)
Fig.5
Drain current as a function of gate-source
voltage, typical values per section.
VDS = 10 V; Tj =25 °C.
handbook, halfpage
0
5
10
20
60
20
0
40
MGP205
15
ID
(A)
VGS (V)
相關(guān)PDF資料
PDF描述
0590060000 27 A, MODULAR TERMINAL BLOCK, 2 ROWS, 2 DECKS
934006640112 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934006660112 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934007240215 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
933821140215 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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