參數(shù)資料
型號(hào): 934006630112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-4
文件頁數(shù): 7/13頁
文件大?。?/td> 105K
代理商: 934006630112
September 1992
3
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF248
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specied.
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
±V
GS
gate-source voltage
20
V
ID
DC drain current
25
A
Ptot
total power dissipation
up to Tmb = 25 °C total device;
both sections equally loaded
500
W
Tstg
storage temperature
65
150
°C
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-mb
thermal resistance from
junction to mounting base
total device; both sections
equally loaded.
0.35 K/W
Rth mb-h
thermal resistance from
mounting base to heatsink
total device; both sections
equally loaded.
0.15 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDS(on).
(2) Tmb = 25 °C.
Total device; both sections equally loaded.
handbook, halfpage
1
10
102
110
VDS (V)
ID
(A)
102
(1)
MRA933
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
0
50
100
150
600
0
200
400
MGP203
Th (°C)
Ptot
(W)
(2)
(1)
相關(guān)PDF資料
PDF描述
0590060000 27 A, MODULAR TERMINAL BLOCK, 2 ROWS, 2 DECKS
934006640112 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934006660112 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934007240215 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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