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參數(shù)資料
| 型號： | 934006630112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 934006630112 |
September 1992
11
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF248
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
Class-AB operation; VDS = 28 V; ID = 2 × 250 mA;
RGS = 536 (per section);
PL = 300 W (total device); Th = 25 °C.
handbook, halfpage
0
250
5
20
15
MGP218
10
5
0
50
100
150
200
ri
xi
Zi
(
)
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values per
section.
Class-AB operation; VDS = 28 V; ID = 2 × 250 mA;
RGS = 536 (per section);
PL = 300 W (total device); Th = 25 °C.
handbook, halfpage
0
3
1
2
0
1
50
250
MGP217
100
150
200
ZL
(
)
f (MHz)
RL
XL
Fig.15 Power gain as a function of frequency,
typical values per section.
Class-AB operation; VDS = 28 V; ID = 2 × 250 mA;
RGS = 536 (per section);
PL = 300 W (total device); Th = 25 °C.
handbook, halfpage
0
40
20
30
10
0
50
250
MGP216
100
150
200
Gp
(dB)
f (MHz)
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