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參數(shù)資料
| 型號： | 934006630112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 934006630112 |
September 1992
6
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF248
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise specied.
RF performance in a linear amplier in a common source class-AB circuit.
RGS = 536 per section; optimum load impedance per section = 0.79 j0.11 .
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
GP
(dB)
D
(%)
class-AB
225
28
300
> 10
typ. 11.5
> 55
typ. 65
175
28
300
typ. 13
typ. 67
Ruggedness in class-AB operation
The BLF248 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:
VDS = 28 V; f = 225 MHz at rated output power.
Fig.9
Power gain and efficiency as functions of
load power, typical values.
Class-AB operation; VDS = 28 V; IDQ = 2 × 250 mA;
RGS = 536 (per section); ZL = 0.79 j0.11 (per
section); f = 225 MHz.
handbook, halfpage
0
100
200
400
20
15
5
0
10
80
60
20
0
40
MGP209
300
PL (W)
Gp
(dB)
Gp
ηD
(%)
ηD
Th = 25 °C
25
°C
70
°C
70
°C
Fig.10 Load power as a function of input power,
typical values.
Class-AB operation; VDS = 28 V; IDQ = 2 × 250 mA;
RGS = 536 (per section); ZL = 0.79 j0.11 (per
section); f = 225 MHz.
handbook, halfpage
010
20
40
400
300
100
0
200
MGP210
30
PL
(W)
PIN (W)
Th = 25 °C
70
°C
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