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參數(shù)資料
| 型號： | 934002430112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-4 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 934002430112 |
October 1992
6
Philips Semiconductors
Product specication
UHF push-pull power MOS transistor
BLF546
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.25 K/W, unless otherwise specied.
RF performance in a common source, class-B, push-pull circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
500
28
2
× 80
80
> 11
typ. 13
> 50
typ. 60
Ruggedness in class-B operation
The BLF546 is capable of withstanding a full load
mismatch corresponding to VSWR = 10 through all phases
under the following conditions:
VDS = 28 V; f = 500 MHz at rated output power.
Fig.9
Power gain and efficiency as functions of
load power, typical values.
Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA;
ZL = 2.3 + j2.7 (per section); f = 500 MHz.
handbook, halfpage
40
60
80
Gp
(dB)
PL (W)
120
25
0
20
100
15
10
5
100
0
80
60
40
20
MDA525
Gp
ηC
(%)
Fig.10 Load power as a function of input power,
typical values.
Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA;
ZL = 2.3 + j2.7 (per section); f = 500 MHz.
handbook, halfpage
0
120
80
40
0
4
PIN (W)
PL
(W)
816
12
MDA526
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