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參數(shù)資料
| 型號(hào)： | 934002430112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-4 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | 934002430112 |
October 1992
3
Philips Semiconductors
Product specication
UHF push-pull power MOS transistor
BLF546
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specied.
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
±V
GS
gate-source voltage
20
V
ID
DC drain current
9A
Ptot
total power dissipation
up to Tmb =25 °C; total device;
both sections equally loaded
145
W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
THERMAL
RESISTANCE
Rth j-mb
thermal resistance from junction to
mounting base
total device; both sections equally
loaded
1.2 K/W
Rth mb-h
thermal resistance from mounting
base to heatsink
total device; both sections equally
loaded
0.25 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by RDS(on).
(2) Tmb =25 °C.
Total device; both sections equally loaded.
handbook, halfpage
1
10
110
MRA995
102
(1)
ID
(A)
VDS (V)
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
0
(1)
(2)
40
80
Ptot
(W)
Th (°C)
160
200
0
160
120
80
40
MDA519
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