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參數(shù)資料
| 型號(hào)： | 934002430112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-4 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 934002430112 |
October 1992
5
Philips Semiconductors
Product specication
UHF push-pull power MOS transistor
BLF546
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
ID = 2.4 A; VGS = 10 V.
handbook, halfpage
0
40
80
160
0.8
0.6
0.2
0
0.4
120
MDA522
RDSon
(
)
Tj (°C)
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values per
section.
VGS = 0; f = 1 MHz.
handbook, halfpage
110
VDS (V)
20
40
250
0
200
30
150
100
50
C
(pF)
MDA523
Cis
Cos
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values per
section.
VGS = 0; f = 1 MHz.
handbook, halfpage
010
20
VDS (V)
Crs
(pF)
40
80
60
20
0
40
30
MDA524
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