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參數(shù)資料
| 型號(hào)： | 934002430112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-4 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 934002430112 |
October 1992
4
Philips Semiconductors
Product specication
UHF push-pull power MOS transistor
BLF546
CHARACTERISTICS (per section)
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 20 mA
65
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
2mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS =0
1
A
VGS(th)
gate-source threshold voltage
ID = 80 mA; VDS = 10 V
1
4V
gfs
forward transconductance
ID = 2.4 A; VDS = 10 V
1.2
1.7
S
RDS(on)
drain-source on-state resistance
ID = 2.4 A; VGS = 10 V
0.4
0.6
IDSX
on-state drain current
VGS = 15 V; VDS = 10 V
10
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
60
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
46
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
15
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
VDS = 10 V.
handbook, halfpage
12
4
8
0
MDA520
ID (A)
T.C.
(mV/K)
110
102
101
Fig.5
Drain current as a function of gate-source
voltage, typical values per section.
VDS = 10 V; Tj = 25 °C.
handbook, halfpage
0
12
8
4
0
4
VGS (V)
ID
(A)
816
12
MDA521
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