參數(shù)資料
型號(hào): 908E621
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror
中文描述: 綜合四半橋和三高的嵌入式微控制器和LIN高端側(cè)鏡
文件頁(yè)數(shù): 14/62頁(yè)
文件大?。?/td> 540K
代理商: 908E621
Analog Integrated Circuit Device Data
Freescale Semiconductor
14
908E621
STATIC ELECTRICAL CHARACTERISTICS
HALL-EFFECT SENSOR INPUT H0 - GENERAL PURPOSE INPUT MODE
(H0MS = 0)
Input Voltage Low Threshold
V
LT
1.5
V
Input Voltage High Threshold
V
HT
3.5
V
Input Voltage Hysteresis
V
HH
100
500
mV
Pullup resistor
R
PH
7.0
10
13
k
HALL-EFFECT SENSOR INPUT H0 - 2PIN HALL SENSOR INPUT MODE
(H0MS = 1)
Output Voltage
V
SUP
< 17V
V
SUP
>17V
V
HALL1
V
HALL2
V
SUP
-1.2
15.8
V
Output Drop @ I
OUT
= 15mA
V
H0D
2.5
V
Sense Current Threshold
I
HSCT
6.0
7.9
10
mA
Sense Current Hysteresis
I
HSCH
600
1650
μA
Sense Current Limitation
V
HSCLIM
20
40
70
mA
ANALOG INPUT A0, A0CST
Current Source A0, A0CST
(22)
(23)
CSSEL1:0 = 00
CSSEL1:0 = 01
CSSEL1:0 = 10
CSSEL1:0 = 11
I
CS1
I
CS2
I
CS3
I
CS4
40
120
320
800
μA
WAKE-UP INPUT L0
Input Voltage Threshold Low
V
LT
1.5
V
Input Voltage Threshold High
V
HT
3.5
V
Input Voltage Hysteresis
V
LH
0.5
V
Input Current
I
N
-10
10
μA
Wake-Up Filter Time
(24)
t
WUP
20
μs
Notes
22.
23.
24.
This parameter is guaranteed only if correct trimming was applied
The current values are optimized to read a NTC temperature sensor, e.g. EPCOS type B57861 (R25 = 3000
,
R/T characteristic 8016)
This parameter is guaranteed by process monitoring but is not production tested.
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V
V
SUP
16 V, -40
°
C
T
J
125
°
C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T
A
= 25
°
C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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