參數(shù)資料
型號(hào): 74F8966
廠商: NXP Semiconductors N.V.
英文描述: 9-Bit address/data Futurebus transceiver, ADT
中文描述: 9位地址/數(shù)據(jù)Futurebus收發(fā)器,ADT的
文件頁(yè)數(shù): 8/11頁(yè)
文件大?。?/td> 119K
代理商: 74F8966
Philips Semiconductors FAST Products
Product specification
74F8965/74F8966
9-Bit address/data Futurebus transceiver, ADT
December 19, 1990
8
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
SYMBOL
PARAMETER
TEST
LIMITS
TYP
2
UNIT
CONDITIONS
1
MIN
MAX
I
OH
High–level output current
B0 – B8
V
CC
= MAX, V
IL
= MAX, V
IH
= MIN, V
OH
= 2.1V
V
CC
= MAX, V
IL
= MAX, V
IH
= MIN, V
OH
= 4.5V
V
CC
= 0.0V, V
IL
= MAX, V
IH
= MIN, V
OH
= 2.1V
V
CC
= 0.0V, V
IL
= MAX, V
IH
= MIN, V
OH
= 4.5V
V
CC
= MAX, V
IL
= MAX, V
IH
= MIN, I
OH
= –3mA
V
CC
= MIN,
V
IL
= MAX
V
IH
= MIN
V
CC
= MIN, I
I
= I
IK
100
μ
A
μ
A
μ
A
μ
A
IAMC (74F8966)
100
I
OFF
Power–off output current
B0 – B8
100
IAMC (74F8966)
A0 – A8
4
A0 – A8
4
100
V
OH
High-level output voltage
2.4
V
CC
0.50
V
I
OL
= 24mA
I
OL
= 48mA
I
OL
= 100mA
V
V
OL
Low-level output voltage
IAMC (74F8966)
0.50
V
B0 – B8
0.75
1.0
1.10
V
V
IK
Input clamp voltage
-1.2
V
I
I
Input current at
maximum input voltage
OEB0, OEB1,
OEA, LE, LS,
IAREQ
A0 – A8, B0 –
B8
OEB0, OEB1,
OEA, LE, LS,
IAREQ
V
CC
= MAX, V
I
= 7.0V
100
μ
A
V
CC
= MAX, V
I
= 5.5V
1
mA
I
IH
High–level input current
V
CC
= MAX, V
I
= 2.7V
20
μ
A
B0 – B8
OEB0, OEB1,
OEA, LE, LS,
IAREQ
V
CC
= MAX, V
I
= 2.1V
100
μ
A
I
IL
Low–level input current
V
CC
= MAX, V
I
= 0.5V
–100
μ
A
B0 – B8
V
CC
= MAX, V
I
= 0.3V
–100
μ
A
I
IH
+ I
OZH
Off–state output current,
high–level voltage applied
A0 – A8
V
CC
= MAX, V
O
= 2.7V
50
μ
A
I
IL
+ I
OZL
Off–state output current,
low–level voltage applied
V
CC
= MAX, V
I
= 0.5V
–50
μ
A
I
OS
Short circuit output
current
3
A0 – A8 only
AO8
I
CCH
I
CCL
I
CCZ
V
CC
= MAX
-60
-150
mA
V
CC
= MAX
V
CC
= MAX, V
IL
= 0.5V
80
140
mA
I
CC
Supply current (total)
85
145
mA
75
100
mA
Notes to DC electrical characteristics
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
2. All typical values are at V
CC
= 5V, T
amb
= 25
°
C.
3. Not more than one output should be shorted at a time. For testing I
OS
, the use of high-speed test apparatus and/or sample-and-hold tech-
niques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting of a
high output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any sequence
of parameter tests, I
OS
tests should be performed last.
4. Due to test equipment limitations, actual test conditions are for V
IH
=1.8V and V
IL
= 1.3V.
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