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| 型號： | 73S1210F-68MR/F/PG |
| 廠商： | Maxim Integrated |
| 文件頁數(shù)： | 30/126頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC SOC SMART CARD READER 68QFN |
| 標準包裝： | 2,500 |
| 系列： | * |
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DS_1210F_001
73S1210F Data Sheet
Rev. 1.4
125
Revision History
Revision
Date
Description
1.0
5/10/2007
First publication.
1.1
11/6/2007
In Table 1, added Equivalent Circuit references.
In Section 1.4, updated program security description to remove pre-boot
and 32-cycle references.
In Section 1.7.1, changed “Mcount is configured in the MCLKCtl register
must be bound between a value of 1 to 7. The possible crystal or external
clock are shown in Table 12.“ to “Mcount is configured in the MCLKCtl
register must be bound between a value of 1 to 7. The possible crystal or
external clock frequencies for getting MCLK = 96MHz are shown in Table
11.”
In the BRCON description, changed “If BSEL = 1, the baud rate is derived
using timer 1.” to “If BSEL = 0, the baud rate is derived using timer 1.”
In Section 1.7.14, removed the following from the emulator port
description: “The signals of the emulator port have weak pull-ups. Adding
resistor footprints for signals E_RST, E_TCLK and E_RXTX on the PCB is
recommended. If necessary, adding 10K
pull-up resistors on E_TCLK
and E_RXTX and a 3K
on E_RST will help the emulator operate
normally if a problem arises.”
In Ordering Information, removed the leaded part numbers.
1.2
12/15/2008
In Table 1, added the “Pin (44 QFN)” column.
In Table 1, added more description to the SCL, SDA, PRES, VCC, VPC,
SEC, TEST and VDD pins.
In Section 1.3.2, changed “FLSH_ERASE” to “ERASE” and
“FLSH_PGADR” to “PGADDR”. Added “The PGADDR register denotes
the page address for page erase. The page size is 512 (200h) bytes and
there are 128 pages within the flash memory. The PGADDR denotes the
upper seven bits of the flash memory address such that bit 7:1 of the
PGADDR corresponds to bit 15:9 of the flash memory address. Bit 0 of
the PGADDR is not used and is ignored.” In the description of the
PGADDR register, added “Note: the page address is shifted left by one bit
(see detailed description above).”
In Table 5, changed “FLSHCRL” to “FLSHCTL”.
In Table 5, removed the PREBOOT bit description.
In Table 5, moved the TRIMPCtl bit description to FUSECtl and moved the
FUSECtl bit description to TRIMPCtl.
In Table 6, changed “PGADR” to “PGADDR”.
In Table 7, added PGADDR.
In Table 8, changed the reset value for RTCCtl from “0x81” to “0x00”.
Added the RTCTrim0 and ACOMP registers. Deleted the OMP, VRCtl,
LEDCal and LOCKCtl registers.
In Table 7, removed the Mcount 7 row.
through USRIntCtl3 to USRIntCtl1 through USRIntCtl4.
In TCON, corrected the descriptions for TCON.2 and TCON.0.
In Section 1.7.9, added a note about USR pins defaulting as inputs after
reset.
Changed the register address for ATRMsB from FE21 to FE1F.
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 73S1210F-EB | 功能描述:開發(fā)板和工具包 - 8051 73S1210F Eval Brd (Doc. Cd, Cable) RoHS:否 制造商:Silicon Labs 產(chǎn)品:Development Kits 工具用于評估:C8051F960, Si7005 核心: 接口類型:USB 工作電源電壓: |
| 73S1210F-EB-Lite | 功能描述:開發(fā)板和工具包 - 8051 73S1210F Eval Brd Lite w/Doc Cd, Cable RoHS:否 制造商:Silicon Labs 產(chǎn)品:Development Kits 工具用于評估:C8051F960, Si7005 核心: 接口類型:USB 工作電源電壓: |
| 73S1210F-EB-LiteMS | 功能描述:開發(fā)板和工具包 - 8051 73S1210F Eval Brd Lite + Multi Sam RoHS:否 制造商:Silicon Labs 產(chǎn)品:Development Kits 工具用于評估:C8051F960, Si7005 核心: 接口類型:USB 工作電源電壓: |
| 73S1215F | 制造商:TERIDIAN 制造商全稱:TERIDIAN 功能描述:80515 System-on-Chip with USB, ISO 7816 / EMV, PINpad and More |
| 73S1215F-44IM/F | 功能描述:8位微控制器 -MCU 80515 SoC w/USB & PINpad RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
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