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參數(shù)資料
| 型號： | 71V416S10PHGI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | 0.400 INCH, TSOP2-44 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 1397K |
| 代理商： | 71V416S10PHGI |
6.42
IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges
DC Electrical Characteristics
(V
DD
= Mn. to Max., Commercial and Industrial Temperature Ranges)
AC Test Conditions
AC Test Loads
Figure 3. Output Capacitive Derating
Figure 1. AC Test Load
Figure 2. AC Test Load
(for t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
OW
, and t
WHZ
)
*Including jig and scope capacitance.
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
1.5ns
1.5V
1.5V
Figures 1,2 and 3
3624 tbl 09
+1.5V
50
I/O
Z
0
= 50
3624 drw 03
30pF
3624 drw 04
320
350
5pF*
DATA
OUT
3.3V
1
2
3
4
5
6
7
20 40
60 80 100 120 140 160180 200
t
AA,
t
ACS
(Typical, ns)
CAPACITANCE (pF)
8
3624 drw 05
DC Electrical Characteristics
(1, 2, 3)
(V
DD
= Mn. to Max., V
LC
= 0.2V, V
HC
= V
DD
– 0.2V)
NOTES:
1. All values are maximumguaranteed values.
2. All inputs switch between 0.2V (Low) and V
DD
-0.2V (High).
3. Power specifications are prelimnary.
4. fMAX = 1/t
RC
(all address inputs are cycling at f
MAX
); f = 0 means no address input lines are changing.
5. Standard power 10ns (S10) speed grade only.
Symbol
Parameter
71V416S/L10
71V416S/L12
71V416S/L15
Unit
Coml.
Ind.
(5)
Coml.
Ind.
Coml.
Ind.
I
CC
Dynamic Operating Current
CS
< V
LC
, Outputs Open, V
DD
= Max., f = f
MAX
(4)
S
200
200
180
180
170
170
mA
L
180
—
170
170
160
160
I
SB
Dynamic Standby Power Supply Current
CS
> V
HC
, Outputs Open, V
DD
= Max., f = f
MAX
(4)
S
70
70
60
60
50
50
mA
L
50
—
45
45
40
40
I
SB1
Full Standby Power Supply Current (static)
CS
> V
HC
, Outputs Open, V
DD
= Max., f = 0
(4)
S
20
20
20
20
20
20
mA
L
10
—
10
10
10
10
3624 tbl 08
Symbol
Parameter
Test Conditions
IDT71V416
Unit
Min.
Max.
|
LI
|
Input Leakage Current
V
CC
= Max., V
IN
=
V
SS
to V
DD
___
5
μA
|
LO
|
Output Leakage Current
V
DD
= Max.,
CS
= V
IH
, V
OUT
= V
SS
to V
DD
___
5
μA
V
OL
Output Low Voltage
I
OL
= 8mA, V
DD
= Min.
___
0.4
V
V
OH
Output High Voltage
I
OH
= -4mA, V
DD
= Min.
2.4
___
V
3624 tbl 07
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|---|---|
| 71V416S10PHGI8 | 功能描述:靜態(tài)隨機存取存儲器 256Kx16 ASYNCHRONOUS 3.3V CMOS 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V416S10PHI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II Tube |
| 71V416S10YG | 功能描述:靜態(tài)隨機存取存儲器 256Kx16 ASYNCHRONOUS 3.3V CMOS 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V416S10YG8 | 功能描述:靜態(tài)隨機存取存儲器 256Kx16 ASYNCHRONOUS 3.3V CMOS 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V416S10YGI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin SOJ Tube/Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 10NS 44PIN SOJ - Rail/Tube 制造商:Integrated Device Technology Inc 功能描述:256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM |
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