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參數(shù)資料
| 型號(hào)： | 71V416S10PHGI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | 0.400 INCH, TSOP2-44 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 1397K |
| 代理商： | 71V416S10PHGI |
6.42
IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges
Pin Configurations - SOJ/TSOP
*Pin 28 can either be a NC or connected to Vss
Top View
Pin Descriptions
A
0
- A
17
SOJ Capacitance
(T
A
= +25°C, f = 1.0MHz)
NOTE:
1. This parameter is guaranteed by device characterization, but not production
tested.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
I/O 7
WE
A9
A8
A7
A6
A5
I/O 6
I/O 5
I/O 4
V
SS
V
DD
I/O 3
I/O 2
I/O 1
I/O 0
CS
A4
A3
A2
A1
A0
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A16
A15
OE
BHE
BLE
I/O 15
I/O 14
I/O 13
I/O 12
V
SS
V
DD
I/O 11
I/O 10
I/O 9
I/O 8
NC*
A14
A13
A12
A11
A10
A17
SO44-1
SO44-2
3624 drw 02
Address Inputs
Input
CS
Chip Select
Input
WE
Write Enable
Input
OE
Output Enable
Input
BHE
High Byte Enable
Input
BLE
Low Byte Enable
Input
I/O
0
- I/O
15
Data Input/Output
I/O
V
DD
3.3V Power
Pwr
V
SS
Ground
Gnd
3624 tbl 01
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
7
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
8
pF
3624 tbl 02
1
2
3
4
5
6
A
BLE
OE
A
0
A
1
A
2
NC
B
I/O
0
BHE
A
3
A
4
CS
I/O
8
C
I/O
1
I/O
2
A
5
A
6
I/O
10
I/O
9
D
V
SS
I/O
3
A
17
A
7
I/O
11
V
DD
E
V
DD
I/O
4
NC
A
16
I/O
12
V
SS
F
I/O
6
I/O
5
A
14
A
15
I/O
13
I/O
14
G
I/O
7
NC
A
12
A
13
WE
I/O
15
H
NC
A
8
A
9
A
10
A
11
NC
3624 tbl 11
Pin Configurations - 48 BGA
48 BGA Capacitance
(T
A
= +25°C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
6
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
7
pF
3624 tbl 02b
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 71V416S10PHGI8 | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx16 ASYNCHRONOUS 3.3V CMOS 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V416S10PHI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II Tube |
| 71V416S10YG | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx16 ASYNCHRONOUS 3.3V CMOS 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V416S10YG8 | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx16 ASYNCHRONOUS 3.3V CMOS 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V416S10YGI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin SOJ Tube/Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 10NS 44PIN SOJ - Rail/Tube 制造商:Integrated Device Technology Inc 功能描述:256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM |
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